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| MA4AGSW5 SP5T AlGaAs PIN Diode Switch RoHS Compliant FEATURES Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 1.7dB Insertion Loss at 50 GHZ 35 dB Isolation at 50 GHz Low Current consumption. * -10mA for low loss state *+10mA for Isolation state M/A-COM's unique AlGaAs hetero-junction Rev. V3 anode technology. Silicon Nitride Passivation Polymer Scratch protection DESCRIPTION M/A-COM's MA4AGSW5 is an Aluminum-GalliumArsenide, single pole, five throw (SP5T), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using M/A-COM's patented heterojunction technology. AlGaAs technology produces a switch with less loss than a device fabricated using conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. This device is fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes within the chip exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage during handling and assembly to the diode junction and the chip anode air-bridges. Off chip bias circuitry is required. Yellow areas indicate bond pads Absolute Maximum Ratings @ TAMB = +25C Parameter Maximum Rating -55C to +125C -55C to +150C +23dBm C.W. 25V 25mA +300C < 10 sec +175C Operating Temperature Storage Temperature Incident C.W. RF Power Breakdown Voltage Bias Current Assembly Temperature Junction Temperature APPLICATIONS The high electron mobility of AlGaAs and the low capacitance of the PIN diodes used makes this switch ideal for fast response, high frequency, multi-throw switch designs where the series capacitance in each off-arm will load the input. AlGaAs PIN diode switches are an ideal choice for switching arrays in radar systems, radiometers, test equipment and other multiassembly components. Maximum combined operating conditions for RF Power, D.C. bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @ +85C. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW5 SP5T AlGaAs PIN Diode Switch RoHS Compliant Electrical Specifications @ TA = 25C, +/-10mA bias current (On-wafer measurements) RF PARAMETER FREQUENCY BAND 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz FREQUENCY BAND Rev. V3 MAX 1.4 1.9 1.4 1.9 1.4 1.9 1.4 1.9 1.4 1.9 MIN UNITS dB dB dB dB dB dB dB dB dB dB UNITS PORT J2 to J1 J3 to J1 J4 to J1 J5 to J1 J6 to J1 PORT BIAS -10 mA @ J2, +10 mA @ J3, J4, J5, J6 -10 mA @ J3, +10 mA @ J2, J4, J5, J6 -10 mA @ J4, +10 mA @ J2, J3, J5, J6 -10 mA @ J5, +10 mA @ J2, J3, J4, J6 -10 mA @ J6, +10 mA @ J2, J3, J4, J5 BIAS INSERTION LOSS RF PARAMETER ISOLATION* 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz FREQUENCY BAND 35.0 30.0 35.0 30.0 35.0 30.0 35.0 30.0 35.0 30.0 MIN dB dB dB dB dB dB dB dB dB dB UNITS J2 to J1 J3 to J1 J4 to J1 J5 to J1 J6 to J1 PORT -10 mA @ J6, +10 mA @ J3, J4, J5, J2 -10 mA @ J6, +10 mA @ J2, J4, J5, J2 -10 mA @ J6, +10 mA @ J2, J3, J5, J2 -10 mA @ J6, +10 mA @ J2, J3, J4, J2 -10 mA @ J2, +10 mA @ J2, J3, J4, J6 BIAS RF PARAMETER INPUT/OUTPUT RETURN LOSS 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 dB dB dB dB dB dB dB dB dB dB J2 to J1 J3 to J1 J4 to J1 J5 to J1 J6 to J1 -10 mA @ J2, +10 mA @ J3, J4, J5, J6 -10 mA @ J3, +10 mA @ J2, J4, J5, J6 -10 mA @ J4, +10 mA @ J2, J3, J5, J6 -10 mA @ J5, +10 mA @ J2, J3, J4, J6 -10 mA @ J6, +10 mA @ J2, J3, J4, J5 *Note: Isolation is measured through (3) diodes from common port ( input ) to selected output port with (1) opposite series junction diode in low loss. Isolation for (2) diodes from common port ( Input ) to selected output with the same series junction diode port in low loss = 22 dB Typical. Parameter Switching Speed* ( 10-90 % RF Voltage ) F ( GHz ) 10.0 RF Ports Test Conditions Typical Value 15 Units nS J1 to J2,J3,J4,J5,J6 +/- 5V TTL Compatible PIN Diode Driver *Note: Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a +/- 5V TTL compatible 2 driver. Driver output parallel RC network uses a capacitor between 390 pF-560 pF and a resistor between 150-220 ohms to achieve 15 ns rise and fall times. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW5 SP5T AlGaAs PIN Diode Switch RoHS Compliant Typical R.F. Performance (Probed on Wafer) @ +25C Rev. V3 Isolation 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW5 SP5T AlGaAs PIN Diode Switch RoHS Compliant Typical RF Performance (Probed on wafer) @ +25C Rev. V3 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW5 SP5T AlGaAs PIN Diode Switch RoHS Compliant Rev. V3 Operation of the MA4AGSW5 Switch The simultaneous application of a negative DC current to the low loss port and positive DC current to the remaining isolated switching ports is required for the operation of the MA4AGSW5, AlGaAs, PIN switch. The backside area of the die is the RF and DC return ground plane. The DC return is connected to the common port J1. The forward bias voltage at J2, J3, J4,J5 & J6 will not exceed 1.6 volts and is typically 1.4 volts with supply current of 30mA). In the low loss state, the series diode must be forward biased and the shunt diode reverse MA4AGSW5 Schematic and Driver Bias Connections TYPICAL DRIVER CONNECTIONS CONTROL LEVEL (DC CURRENT) J2 -10mA +10mA +10mA +10mA +10mA 5 CONDITION OF RF OUTPUT J2-J1 J3-J1 J4-J1 J5-J1 J6-J1 Isolation Isolation Isolation Low Loss Isolation Isolation Low Loss Isolation Isolation Isolation Isolation Isolation Low Loss Isolation Isolation Isolation Isolation Isolation Low Loss Isolation Isolation Isolation Isolation Isolation Low Loss J3 +10mA -10mA +10mA +10mA +10mA J4 +10mA +10mA -10mA +10mA +10mA J5 +10mA +10mA +10mA -10mA +10mA J6 +10mA +10mA +10mA +10mA -10mA ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW5 SP5T AlGaAs PIN Diode Switch RoHS Compliant Rev. V3 Chip Dimensions and Bonding Pad Locations (In Yellow) H Dimensions Location A B C D E F G H Pads mils min max min mm max 60.0 63.2 29.7 15.2 32.2 6.5 25.7 3.7 3.9 61.2 64.4 30.9 16.0 33.0 7.2 26.5 4.3 4.3 1.524 1.605 0.754 0.386 0.818 0.165 0.653 0.094 0.099 1.555 1.636 0.785 0.406 0.838 0.183 0.673 0.109 0.109 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW5 SP5T AlGaAs PIN Diode Switch RoHS Compliant ASSEMBLY INSTRUCTIONS CLEANLINESS The chip should be handled in a clean environment. Rev. V3 STATIC SENSITIVITY This device is considered ESD Class 1A, HBM. Proper ESD techniques should be used during handling. GENERAL HANDLING The protective polymer coating on the active areas of the die provides scratch and impact protection, particularly for the metal air bridge, which contacts the diode's anode. Die should primarily be handled with vacuum pickup tools, or alternatively with plastic tweezers. ASSEMBLY TECHNIQUES The MA4AGSW5, AlGaAs device is designed to be mounted with electrically conductive silver epoxy or with a low temperature solder perform, which does not have a rich tin content. SOLDER DIE ATTACH Only solders which do not scavenge gold, such as 80/20, Au/Sn or Indalloy #2 is recommended. Do not expose die to temperatures greater than 300C for more than 10 seconds. ELECTRICAL CONDUCTIVE EPOXY DIE ATTACH Use a controlled thickness of approximately 2 mils for best electrical conductivity and lowest thermal resistance. Cure epoxy per manufacturer's schedule. Typically 150C for 1 hour. RIBBON/WIRE BONDING Thermo-compression wedge or ball bonding may be used to attach ribbons or wire to the gold bonding pads. A 1/4 x 3 mil gold ribbon is recommended on all RF ports and should be kept as short as possible for the lowest inductance and best microwave performance. For more detailed handling and assembly instructions, see Application Note M541, "Bonding and Handling Procedures for Chip Diode Devices" at www.macom.com. Ordering Information Part Number MA4AGSW5 MASW-000555-13570G Packaging Waffle Pack Gel Pack 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. |
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